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 HRF503A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-401B(Z) Rev 2 Features
* Low forward voltage drop and suitable for high effifiency rectifying. * DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRF503A Laser Mark 503A Package Code DO-214
Outline
Cathode mark Mark
503A
1 2 1. Cathode 2. Anode
HRF503A
Absolute Maximum Ratings (Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V
*1 RRM
Value 35 5
Unit V A A C C
I o*1 I FSM Tj Tstg
*2
100 125 -40 to +125
Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25C)
Item Forward voltage Symbol VF1 VF2 Reverse current Thermal resistance IR Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min -- -- -- -- -- Typ 0.38 -- -- 75 35 Max -- 0.45 1.0 -- -- mA Unit V Test Condition I F = 3A I F = 5A VR = 35V
*1
C/W Glass epoxy board Tc = 25C
Land size
3.5 6.8 2.0
Unit: mm
2
HRF503A
Main Characteristic
2
10
10 Pulse test
-2
Pulse test Ta=75C
Forward current I F (A)
10 Ta=75C 1.0 Ta=25C
Reverse current I R (A)
10
-3
10
-4
Ta=25C
10
-1
10
-2
10
-5
10
-3
0
0.1
0.2
0.3
0.4
0.5
0.6
10
-6
0
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
20 40 10 30 Reverse voltage V R (V)
50
Fig.2 Reverse current Vs. Reverse voltage
10
3
f=1MHz Pulse test
Capacitance C (pF)
10
2
10
1.0
10 Reverse voltage V R (V)
40
Fig.3 Capacitance Vs. Reverse voltage
3
HRF503A
Main Characteristic
5
0A t T Tj =25C D=
12
0V
D=5/6
t T D= t T
Forward power dissipation Pd (W)
4
t T
Reverse power dissipation Pd (W)
D=1/6
10
D=2/3
Tj =125C
Sin D=1/3 3 D=1/2 DC 2
8 D=1/2 6 Sin 4
1
2 0
0 0 1 2 3 4 5 6
0
10
20
30
40
Forward current I F (A) Fig.4 Forward p ower dissipation Vs. Forward current
Reverse voltage V R(V) Fig.5 Reverse power dissipation Vs. Reverse voltage
6
VR=15V Tj =125C
6
VR=15V Tj =125C Glass epoxy PCB
5
Average forward current IO (A) Average forward current IO (A)
5 DC DC
4
D=1/3
4
3 D=1/6 2 Sin D=1/2
3
2 D=1/3 D=1/2 Sin 0 -25 0 25 50 75 100 125
1 D=1/6 0 -25 0 25 50 75 100 125
1
Case temperature Tc (C) Fig.6 Average forward current Vs. Case temperature
Ambient temperature Ta (C) Fig.7 Average forward current Vs. Ambient temperature
4
HRF503A
Package Dimensions
Unit : mm
Cathode Mark 3.0 0.2 4.0 0.2
503A
1 2
7.0 0.2 8.0 0.3
1 Cathode 2 Anode
0.25
1.2 0.3
2.1 0.2
Hitachi Code JEDEC Code EIAJ Code Weight (g)
DO-214 DO-214 -- 0.16
5


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